Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages

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Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages

A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) m...

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Những tác giả chính:	Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ji-Ting Liang, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Jr-Jie Tsai, Wen-Fa Wu, Chenhsin Lien
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	IEEE Publishing 2024
Những chủ đề:	Gate-all-around nanowire Schottky barrier (SB) Silicon–oxide-nitride-oxide-silicon (SONOS) memory
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/3298
Các nhãn:	Thêm thẻ Không có thẻ, Là người đầu tiên thẻ bản ghi này!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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