A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices

A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices

This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric fi...

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Những tác giả chính: Chun-Hsing Shih, Ji-Ting Liang, Jhong-Sheng Wang, Nguyễn, Đăng Chiến
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: IEEE Publishing 2024
Những chủ đề:
Lucky electron model
Metal–oxide– semiconductor (MOS)
Schottky barrier
Source-side injection
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3299
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-3299
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Lucky electron model
Metal–oxide– semiconductor (MOS)
Schottky barrier
Source-side injection
spellingShingle Lucky electron model
Metal–oxide– semiconductor (MOS)
Schottky barrier
Source-side injection
Chun-Hsing Shih
Ji-Ting Liang
Jhong-Sheng Wang
Nguyễn, Đăng Chiến
A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
description This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson's equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. This study provides a physical understanding of enhanced source-side injection in new Schottky barrier nonvolatile memory.
format Journal article
author Chun-Hsing Shih
Ji-Ting Liang
Jhong-Sheng Wang
Nguyễn, Đăng Chiến
author_facet Chun-Hsing Shih
Ji-Ting Liang
Jhong-Sheng Wang
Nguyễn, Đăng Chiến
author_sort Chun-Hsing Shih
title A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
title_short A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
title_full A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
title_fullStr A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
title_full_unstemmed A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
title_sort source-side injection lucky electron model for schottky barrier metal-oxide-semiconductor devices
publisher IEEE Publishing
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3299
_version_ 1798256982428221440
spelling oai:scholar.dlu.edu.vn:123456789-32992024-03-01T08:02:39Z A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices Chun-Hsing Shih Ji-Ting Liang Jhong-Sheng Wang Nguyễn, Đăng Chiến Lucky electron model Metal–oxide– semiconductor (MOS) Schottky barrier Source-side injection This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson's equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. 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