A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices

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A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices

This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric fi...

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Những tác giả chính:	Chun-Hsing Shih, Ji-Ting Liang, Jhong-Sheng Wang, Nguyễn, Đăng Chiến
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	IEEE Publishing 2024
Những chủ đề:	Lucky electron model Metal–oxide– semiconductor (MOS) Schottky barrier Source-side injection
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/3299
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