Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...
Guardat en:
| Autors principals: | , , , |
|---|---|
| Format: | Conference paper |
| Idioma: | English |
| Publicat: |
IEEE Publishing
2024
|
| Accés en línia: | https://scholar.dlu.edu.vn/handle/123456789/3304 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|