Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , |
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| Fformat: | Conference paper |
| Iaith: | English |
| Cyhoeddwyd: |
IEEE Publishing
2024
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| Mynediad Ar-lein: | https://scholar.dlu.edu.vn/handle/123456789/3304 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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