Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
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| Μορφή: | Conference paper |
| Γλώσσα: | English |
| Έκδοση: |
IEEE Publishing
2024
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| Διαθέσιμο Online: | https://scholar.dlu.edu.vn/handle/123456789/3304 |
| Ετικέτες: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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