Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...
Đã lưu trong:
| Những tác giả chính: | , , , |
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| Formáid: | Conference paper |
| Teanga: | English |
| Foilsithe: |
IEEE Publishing
2024
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| Rochtain Ar Líne: | https://scholar.dlu.edu.vn/handle/123456789/3304 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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