Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...
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| 主要な著者: | , , , |
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| フォーマット: | Conference paper |
| 言語: | English |
| 出版事項: |
IEEE Publishing
2024
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| オンライン･アクセス: | https://scholar.dlu.edu.vn/handle/123456789/3304 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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