DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS

DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS

Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...

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Những tác giả chính: Nguyễn, Đăng Chiến, Lưu, Thế Vinh, Huỳnh, Thị Hồng Thắm, Chun-Hsing, Shih
Định dạng: Bài viết
Ngôn ngữ:English
Được phát hành: Trường Đại học Đà Lạt 2023
Truy cập trực tuyến:https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/114375
https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745
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spelling oai:scholar.dlu.edu.vn:DLU123456789-1143752023-10-27T14:45:53Z DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS Nguyễn, Đăng Chiến Lưu, Thế Vinh Huỳnh, Thị Hồng Thắm Chun-Hsing, Shih Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gate TFETs. Proper comparisons and analyses show that the roles and designs of source-side dielectric heterojunctions are similar, whereas those of drain-side dielectric heterojunctions are extremely different in single- and double-gate TFETs. For both device structures, the optimal position of a source-side dielectric heterojunction does not depend on the ratio of low/high-k equivalent oxide thicknesses (EOTs). When increasing the EOT ratio, the on-current enhancement by an optimized source-side dielectric heterojunction is first increased (EOT ratio < 12) and then saturated (EOT ratio > 12). The role of a drain-side dielectric heterojunction in enhancing on-current is limited in double-gate TFETs (every EOT ratio), but significant in single-gate devices (EOT ratio < 12). For EOT ratios < 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is around 2-3 nm farther from the source compared to that in single-gate TFETs. For EOT ratios > 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is not dependent on the EOT ratio, unlike single-gate TFETs. Those differences are due to the difference in the depths of local potential wells in the two TFET structures. 2023-03-04T08:25:29Z 2023-03-04T08:25:29Z 2020 Article 0866-787X https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/114375 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 10.37569/DalatUniversity.10.3.745(2020) en Tạp chí Khoa học Đại học Đà Lạt, Tập 10, Số 3; tr. 110-123 application/pdf Trường Đại học Đà Lạt
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
description Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gate TFETs. Proper comparisons and analyses show that the roles and designs of source-side dielectric heterojunctions are similar, whereas those of drain-side dielectric heterojunctions are extremely different in single- and double-gate TFETs. For both device structures, the optimal position of a source-side dielectric heterojunction does not depend on the ratio of low/high-k equivalent oxide thicknesses (EOTs). When increasing the EOT ratio, the on-current enhancement by an optimized source-side dielectric heterojunction is first increased (EOT ratio < 12) and then saturated (EOT ratio > 12). The role of a drain-side dielectric heterojunction in enhancing on-current is limited in double-gate TFETs (every EOT ratio), but significant in single-gate devices (EOT ratio < 12). For EOT ratios < 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is around 2-3 nm farther from the source compared to that in single-gate TFETs. For EOT ratios > 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is not dependent on the EOT ratio, unlike single-gate TFETs. Those differences are due to the difference in the depths of local potential wells in the two TFET structures.
format Article
author Nguyễn, Đăng Chiến
Lưu, Thế Vinh
Huỳnh, Thị Hồng Thắm
Chun-Hsing, Shih
spellingShingle Nguyễn, Đăng Chiến
Lưu, Thế Vinh
Huỳnh, Thị Hồng Thắm
Chun-Hsing, Shih
DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
author_facet Nguyễn, Đăng Chiến
Lưu, Thế Vinh
Huỳnh, Thị Hồng Thắm
Chun-Hsing, Shih
author_sort Nguyễn, Đăng Chiến
title DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
title_short DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
title_full DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
title_fullStr DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
title_full_unstemmed DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
title_sort different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
publisher Trường Đại học Đà Lạt
publishDate 2023
url https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/114375
https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745
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