DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...
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| Главные авторы: | , , , |
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| Формат: | Статья |
| Язык: | English |
| Опубликовано: |
Trường Đại học Đà Lạt
2023
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| Online-ссылка: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/114375 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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