DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS

Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...

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Bibliographic Details
Main Authors: Nguyễn, Đăng Chiến, Lưu, Thế Vinh, Huỳnh, Thị Hồng Thắm, Chun-Hsing, Shih
Format: Article
Language:English
Published: Trường Đại học Đà Lạt 2023
Online Access:https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/114375
https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745
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Institutions: Thư viện Trường Đại học Đà Lạt