Relationship between secondary electrom emissions and film thickness of hydrogenated amorphous silicon /
Wedi'i Gadw mewn:
| Awduron Eraill: | Chu, Byung-Yoon., Han, Byoung-Sung., Ko, Seok-Cheol., Yang, Sung-Chae. |
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| Fformat: | Erthygl |
| Iaith: | English |
| Pynciau: | |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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Eitemau Tebyg
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Amorphous silicon and related materials
gan: Fritzsche, Hellmut
Cyhoeddwyd: (1989) -
Amorphization of silicon by 250 keV electron irradiation and hydrogen annealing /
gan: Jo, Jung-Yol. - Multimode detection of hydrogen gas using palladium-covered silicon micro-channels /
- On the effect of the amorphous silicon microstructure on the grain size of solid phase crystallized polycrystalline silicon /
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Hydrogen ion diffusion coefficient of a hydrogenated amorphous silicon thin film /
gan: Yu, George C.