Remote hydrogen-nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films /

Remote hydrogen-nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films /

Tallennettuna:
Bibliografiset tiedot
Muut tekijät: Aoki, T., Baszczyk, I., Hatanaka, Y., Klemberg-Sapieha, J. E., Tracz, A., Walkiewicz-Pietrzykowska, A., Wrobel, A. M.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
Chemical reactivity
Inorganic compounds
Kinetics
Nitrides
Plasma chemistry
Reaction mechanism
Thin films
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