Lonizing radiation effects in mos oxides
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | كتاب |
| اللغة: | Vietnamese |
| منشور في: |
Singapore
World Scientific
1999
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| سلاسل: | International advances in solid state electronics and technology
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Nam Cần Thơ |
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| الملخص: | This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. |
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| وصف مادي: | xiv, 171 p. 23cm |
| ردمك: | 9810233264 |