Lonizing radiation effects in mos oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.

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Bibliografische gegevens
Hoofdauteur: Oldham, Timothy R
Formaat: Boek
Taal:Vietnamese
Gepubliceerd in: Singapore World Scientific 1999
Reeks:International advances in solid state electronics and technology
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Thư viện lưu trữ: Thư viện Trường Đại học Nam Cần Thơ
Omschrijving
Samenvatting:This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
Fysieke beschrijving:xiv, 171 p. 23cm
ISBN:9810233264