Lonizing radiation effects in mos oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.

Tallennettuna:
Bibliografiset tiedot
Päätekijä: Oldham, Timothy R
Aineistotyyppi: Kirja
Kieli:Vietnamese
Julkaistu: Singapore World Scientific 1999
Sarja:International advances in solid state electronics and technology
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Thư viện lưu trữ: Thư viện Trường Đại học Nam Cần Thơ
Kuvaus
Yhteenveto:This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
Ulkoasu:xiv, 171 p. 23cm
ISBN:9810233264