Lonizing radiation effects in mos oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Prif Awdur: Oldham, Timothy R
Fformat: Llyfr
Iaith:Vietnamese
Cyhoeddwyd: Singapore World Scientific 1999
Cyfres:International advances in solid state electronics and technology
Pynciau:
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
Thư viện lưu trữ: Thư viện Trường Đại học Nam Cần Thơ
Disgrifiad
Crynodeb:This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
Disgrifiad Corfforoll:xiv, 171 p. 23cm
ISBN:9810233264