Lonizing radiation effects in mos oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.

保存先:
書誌詳細
第一著者: Oldham, Timothy R
フォーマット: 図書
言語:Vietnamese
出版事項: Singapore World Scientific 1999
シリーズ:International advances in solid state electronics and technology
主題:
タグ: タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
Thư viện lưu trữ: Thư viện Trường Đại học Nam Cần Thơ