Lonizing radiation effects in mos oxides
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
Shranjeno v:
| Glavni avtor: | |
|---|---|
| Format: | Knjiga |
| Jezik: | Vietnamese |
| Izdano: |
Singapore
World Scientific
1999
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| Serija: | International advances in solid state electronics and technology
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| Teme: | |
| Oznake: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Nam Cần Thơ |
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| 082 | 0 | 4 | |2 23rd ed. |a 539.72 |b O375 |
| 100 | |a Oldham, Timothy R | ||
| 245 | 1 | 0 | |a Lonizing radiation effects in mos oxides |c Timothy R Oldham |
| 260 | |a Singapore |b World Scientific |c 1999 | ||
| 300 | |a xiv, 171 p. |c 23cm | ||
| 490 | |a International advances in solid state electronics and technology | ||
| 520 | 3 | |a This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. | |
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| 980 | |a Thư viện Trường Đại học Nam Cần Thơ | ||