Lonizing radiation effects in mos oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.

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Hlavní autor: Oldham, Timothy R
Médium: Kniha
Jazyk:Vietnamese
Vydáno: Singapore World Scientific 1999
Edice:International advances in solid state electronics and technology
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Thư viện lưu trữ: Thư viện Trường Đại học Nam Cần Thơ