Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
The dimensional scaling of tunnel field-effect transistors (TFETs) is an indispensable issue to make them competitive with traditional metal-oxide-semiconductor field-effect transistors (MOSFETs). This paper elucidates the scalabilities of very potential TFETs utilizing Si/SiGe heterojunctions opera...
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| Những tác giả chính: | , , , |
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| Định dạng: | Conference paper |
| Ngôn ngữ: | English |
| Được phát hành: |
IEEE Publishing
2024
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| Những chủ đề: | |
| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/3312 |
| Các nhãn: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | The dimensional scaling of tunnel field-effect transistors (TFETs) is an indispensable issue to make them competitive with traditional metal-oxide-semiconductor field-effect transistors (MOSFETs). This paper elucidates the scalabilities of very potential TFETs utilizing Si/SiGe heterojunctions operated in n- and p-type operation modes. Although using the Si/SiGe heterostructures helps to improve the on-currents of both n- and p-type TFETs, its assistance in scaling the device dimension is essentially different between the n- and p-type modes. The asymmetric band-offset of Si/SiGe heterojunctions associated with the asymmetric properties of tunneling in n- and p-type TFETs are responsible for the scalability difference. With a high scalability down to sub-10 nm, the graded Si/SiGe heterojunction p-type TFET exhibits a feasible candidate for low-power and highly-scaled integrated circuits. |
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