DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | Artículo |
| Lenguaje: | English |
| Publicado: |
Trường Đại học Đà Lạt
2023
|
| Acceso en línea: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/114375 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Sea el primero en dejar un comentario!