Remote hydrogen-nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films /

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Remote hydrogen-nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films /

محفوظ في:

التفاصيل البيبلوغرافية
مؤلفون آخرون:	Aoki, T., Baszczyk, I., Hatanaka, Y., Klemberg-Sapieha, J. E., Tracz, A., Walkiewicz-Pietrzykowska, A., Wrobel, A. M.
التنسيق:	مقال
اللغة:	English
الموضوعات:	Chemical reactivity Inorganic compounds Kinetics Nitrides Plasma chemistry Reaction mechanism Thin films
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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