Remote hydrogen-nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films /

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Remote hydrogen-nitrogen plasma chemical vapor deposition from a tetramethyldisilazane source. Part 1. Mechanism of the process, structure and surface morphology of deposited amorphous hydrogenated silicon carbonitride films /

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Opis bibliograficzny
Kolejni autorzy:	Aoki, T., Baszczyk, I., Hatanaka, Y., Klemberg-Sapieha, J. E., Tracz, A., Walkiewicz-Pietrzykowska, A., Wrobel, A. M.
Format:	Artykuł
Język:	English
Hasła przedmiotowe:	Chemical reactivity Inorganic compounds Kinetics Nitrides Plasma chemistry Reaction mechanism Thin films
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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