Design and Modeling of Tunnel Field-Effect Transistors
Doctoral Thesis
Wedi'i Gadw mewn:
Prif Awdur: | Nguyễn, Đăng Chiến |
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Awduron Eraill: | Shih, Chun-Hsing |
Fformat: | Dissertation |
Iaith: | en_US |
Cyhoeddwyd: |
National Chi Nan University
2023
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Pynciau: | |
Mynediad Ar-lein: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/115757 |
Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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Eitemau Tebyg
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Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
gan: Nguyễn, Đăng Chiến, et al.
Cyhoeddwyd: (2024) -
Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
gan: Chun-Hsing Shih, et al.
Cyhoeddwyd: (2024) -
Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
gan: Nguyễn, Đăng Chiến, et al.
Cyhoeddwyd: (2024) -
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
gan: Nguyễn, Đăng Chiến, et al.
Cyhoeddwyd: (2023) -
A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
gan: Bui Huu Thai, et al.
Cyhoeddwyd: (2024)