Design and Modeling of Tunnel Field-Effect Transistors
Doctoral Thesis
में बचाया:
मुख्य लेखक: | Nguyễn, Đăng Chiến |
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अन्य लेखक: | Shih, Chun-Hsing |
स्वरूप: | Dissertation |
भाषा: | en_US |
प्रकाशित: |
National Chi Nan University
2023
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विषय: | |
ऑनलाइन पहुंच: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/115757 |
टैग : |
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Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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समान संसाधन
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Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
द्वारा: Nguyễn, Đăng Chiến, और अन्य
प्रकाशित: (2024) -
Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
द्वारा: Chun-Hsing Shih, और अन्य
प्रकाशित: (2024) -
Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
द्वारा: Nguyễn, Đăng Chiến, और अन्य
प्रकाशित: (2024) -
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
द्वारा: Nguyễn, Đăng Chiến, और अन्य
प्रकाशित: (2023) -
A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
द्वारा: Bui Huu Thai, और अन्य
प्रकाशित: (2024)