Design and Modeling of Tunnel Field-Effect Transistors
Doctoral Thesis
Bewaard in:
Hoofdauteur: | Nguyễn, Đăng Chiến |
---|---|
Andere auteurs: | Shih, Chun-Hsing |
Formaat: | Dissertation |
Taal: | en_US |
Gepubliceerd in: |
National Chi Nan University
2023
|
Onderwerpen: | |
Online toegang: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/115757 |
Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|
Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
---|
Gelijkaardige items
-
Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
door: Nguyễn, Đăng Chiến, et al.
Gepubliceerd in: (2024) -
Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
door: Chun-Hsing Shih, et al.
Gepubliceerd in: (2024) -
Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
door: Nguyễn, Đăng Chiến, et al.
Gepubliceerd in: (2024) -
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
door: Nguyễn, Đăng Chiến, et al.
Gepubliceerd in: (2023) -
A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
door: Bui Huu Thai, et al.
Gepubliceerd in: (2024)