Materials for magnetoresistive random access memory /

Código QR

Materials for magnetoresistive random access memory /

Guardado en:

Detalles Bibliográficos
Autor principal:	Slaughter, J. M.
Formato:	Artículo
Lenguaje:	English
Materias:	Magnetic tunnel junction Magnetoelectronics Nonvolatile memory Spin-torque transfer Spintronics Tunneling magnetoresistance
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

Ejemplares similares

Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2024)

Phase change materials /
por: Raoux, Simone.

Strongly Correlated Systems: Experimental Techniques
por: Avella, Adolfo, et al.
Publicado: (2016)

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
por: Ji-Ting Liang, et al.
Publicado: (2024)

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
por: Luu The Vinh, et al.
Publicado: (2023)

Fluctuations in biological and bioinspired electron-transfer reactions /
por: Skourtis, Spiros S.

Tunneling in complex systems
Publicado: (1998)

Thiết kế hầm giao thông
por: Nguyễn, Thế Phùng
Publicado: (2008)

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2024)

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
por: Chun-Hsing Shih, et al.
Publicado: (2024)

Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
por: Chun-Hsing Shih, et al.
Publicado: (2023)

Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET)
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2025)

A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors
por: Bui Huu Thai, et al.
Publicado: (2024)

Re-evaluating the volume effect in double-gate tunnel field effect transistors
por: Bui Huu Thai, et al.
Publicado: (2024)

Thin-body effects in double-gate tunnel field-effect transistors
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2024)

Embryology, epigenesis, and evolution :
por: Robert, Jason Scott
Publicado: (2004)

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
por: Bui Huu Thai, et al.
Publicado: (2024)

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
por: Bui, Huu Thai, et al.
Publicado: (2024)

Tunneling Dynamics in Open Ultracold Bosonic Systems: Numerically Exact Dynamics – Analytical Models – Control Schemes
por: Lode, Axel U. J
Publicado: (2016)

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
por: Chun-Hsing Shih, et al.
Publicado: (2024)

Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities: From a Single Kondo Atom Towards a Coupled System
por: Prüser, Henning
Publicado: (2016)

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2023)

Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2024)

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2024)

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2023)

Magnetic and magnetotransport properties of La1-xBaxMnO3-x/2 perovskite manganites /
por: Trukhanov, Sergei V.

Electrochemical synthesis and magnetoresistance properties of Ni, Co and Co/Cu nanowires in a nanoporous anodic oxide layer on metallic aluminium /

Scanning tunneling microscopy with chemically modified gold tips : In situ reestablishment of chemical contrast /
por: Olson, Joel A.

Short-channel effect and device design of extremely scaled tunnel field-effect transistors
por: Nguyễn, Đăng Chiến, et al.
Publicado: (2023)

Dr. Pascarelli's complete guide to repetitive strain injury :
por: Pascarelli, Emil F.
Publicado: (2004)

Nonlinear dynamics and collective excitations of spin-1 magnets
por: Trần, Quang Vương, et al.
Publicado: (2023)

Memory, responsibility, and identity /
por: Poole, Ross.

Torque control strategy for high performance SR drive /
por: Ahn, Jin-Woo.

Handbook of binding and memory
por: Zimmer, Hubert D.
Publicado: (2006)

Rethinking implicit memory

Transformations between history and memory /
por: Assmann, Aleida.

A model of 3D shape memory alloy materials /
por: Aiki, Toyohiko.

Direct observation of chiral oligo(p-phenylenevinylene)s with scanning tunneling microscopy /

A tale of Easter ovens : Food and collective memory /
por: Sutton, David.

Microscopic dynamic analysis of heat and mass transfer : Thermal energy propagation near the critical point and electronic dynamics in a mesoscopic system /
por: Ishii, Koji.