Materials for magnetoresistive random access memory /
Guardat en:
Autor principal: | Slaughter, J. M. |
---|---|
Format: | Article |
Idioma: | English |
Matèries: | |
Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|
Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
---|
Ítems similars
-
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
per: Nguyễn, Đăng Chiến, et al.
Publicat: (2024) -
Phase change materials /
per: Raoux, Simone. -
Strongly Correlated Systems:
Experimental Techniques
per: Avella, Adolfo, et al.
Publicat: (2016) -
Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
per: Luu The Vinh, et al.
Publicat: (2023) -
Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
per: Ji-Ting Liang, et al.
Publicat: (2024)