Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applications

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Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applications

This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on source-side injection are considered for properly...

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Những tác giả chính:	Hung-Jin Teng, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyễn, Đăng Chiến, Chenhsin Lien, Chun-Hsing Shih
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	MDPI 2021
Những chủ đề:	Schottky barrier Source-side injection Charge-trapping memory Energy-efficient Non-planar double-gate High-k dielectrics
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/505
Các nhãn:	Thêm thẻ Không có thẻ, Là người đầu tiên thẻ bản ghi này!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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