Materials for magnetoresistive random access memory /
Wedi'i Gadw mewn:
Prif Awdur: | Slaughter, J. M. |
---|---|
Fformat: | Erthygl |
Iaith: | English |
Pynciau: | |
Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
---|
Eitemau Tebyg
-
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
gan: Nguyễn, Đăng Chiến, et al.
Cyhoeddwyd: (2024) -
Phase change materials /
gan: Raoux, Simone. -
Strongly Correlated Systems:
Experimental Techniques
gan: Avella, Adolfo, et al.
Cyhoeddwyd: (2016) -
Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
gan: Luu The Vinh, et al.
Cyhoeddwyd: (2023) -
Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
gan: Ji-Ting Liang, et al.
Cyhoeddwyd: (2024)