Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors

по Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2023

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions

по Nguyễn, Đăng Chiến, Chun-Hsing Shih
Опубликовано 2023

Short-channel effect and device design of extremely scaled tunnel field-effect transistors

по Nguyễn, Đăng Chiến, Chun-Hsing Shih
Опубликовано 2023

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors

по Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

по Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions

по Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction

по Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

по Nguyễn, Đăng Chiến, Chun-Hsing Shih
Опубликовано 2023

Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach

по Nguyễn, Đăng Chiến, Chun-Hsing Shih, Luu The Vinh
Опубликовано 2024

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors

по Nguyễn, Đăng Chiến, Luu The Vinh, Chun-Hsing Shih
Опубликовано 2024

Re-evaluating the volume effect in double-gate tunnel field effect transistors

по Bui Huu Thai, Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors

по Bui Huu Thai, Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

Thin-body effects in double-gate tunnel field-effect transistors

по Nguyễn, Đăng Chiến, Bui Huu Thai, Chun-Hsing Shih
Опубликовано 2024

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket

по Bui Huu Thai, Chun-Hsing Shih, Nguyễn, Đăng Chiến
Опубликовано 2024

Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors

по Nguyễn, Đăng Chiến, Dao Thi Kim Anh, Chun-Hsing Shih
Опубликовано 2023

Quantum Confinement Effect in Strained-Si¬1-xGex Double-Gate Tunnel Field-Effect Transistors

по Nguyễn, Đăng Chiến, Chun-Hsing Shih, Luu The Vinh, Nguyen Van Kien
Опубликовано 2024

Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions

по Nguyễn, Đăng Chiến, Nguyen Thi Thu, Chun-Hsing Shih, Luu The Vinh
Опубликовано 2024

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors

по Nguyễn, Đăng Chiến, Huynh Thi Hong Tham, Luu The Vinh, Chun-Hsing Shih
Опубликовано 2023

Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs

по Nguyễn, Đăng Chiến, Nguyen Van Hao, Lê, Văn Tùng, Chun-Hsing Shih
Опубликовано 2024

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors

по Nguyễn, Đăng Chiến, Luu The Vinh, Huynh Thi Hong Tham, Chun-Hsing Shih
Опубликовано 2024