Theory and applications of field-effect transistors

QR Code (код быстрого отклика)

Theory and applications of field-effect transistors

The content is essentially divided into four parts: an introductory survey; fabrication; theory of junction-gate and metal-insulator semiconducto transistors; and circuit applications.

Сохранить в:

Библиографические подробности
Главный автор:	Cobbold, Richard S. C.
Формат:	‌
Язык:	Undetermined
Опубликовано:	New York Wiley-Interscience 1970
Предметы:	Transistor hiệu ứng trường,Field-effect transistors
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

Схожие документы

Field-effect transistors :
Опубликовано: (1966)

Short-channel effect and device design of extremely scaled tunnel field-effect transistors
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2023)

Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
по: Lei, Ting
Опубликовано: (2015)

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2023)

Thin-body effects in double-gate tunnel field-effect transistors
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
по: Chun-Hsing Shih, et al.
Опубликовано: (2024)

Analysis of NAD+/NADH cofactors by imprinted polymer membranes associated with ion-sensitive field-effect transistor devices and au-quartz crystals /

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
по: Luu The Vinh, et al.
Опубликовано: (2023)

Transistors
по: Gillie, A. C.
Опубликовано: (1959)

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
по: Chun-Hsing Shih, et al.
Опубликовано: (2024)

Transistor technology
по: Biondi, F.J.
Опубликовано: (1957)

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

Transistor physics and circuits
Опубликовано: (1958)

Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

Transistor?... thật là đơn giản
по: E Aisberg
Опубликовано: (1972)

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2023)

Transistor audio amplifiers
по: Jones, Dwight V.
Опубликовано: (1968)

Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2023)

Design optimization of extremely short-channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

Mạch điện tử transistor
по: Phạm Hữu Hiệp
Опубликовано: (1970)

Phân tích mạch transistor :
по: Đỗ, Thanh Hải
Опубликовано: (2002)

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

Transistor?... thật là đơn giản
по: E Aisberg
Опубликовано: (1972)

Nguyên lí máy thu transistor
по: Phạm Văn Đương
Опубликовано: (1972)

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
по: Chun-Hsing Shih, et al.
Опубликовано: (2024)

Re-evaluating the volume effect in double-gate tunnel field effect transistors
по: Bui Huu Thai, et al.
Опубликовано: (2024)

Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
по: Chun-Hsing Shih, et al.
Опубликовано: (2023)

MOSFET theory and design
по: Warner Jr, R. M.
Опубликовано: (1999)

Operation and modeling of the MOS transistor
по: Yannis Tsividis
Опубликовано: (2011)

Transistor circuit analysis
по: Joyce, Maurice V.
Опубликовано: (1961)

Principles of transistor circuits
Опубликовано: (1953)

In-situ crosslinking and n-doping of semiconducting polymers and their application as efficient electron-transporting materials in inverted polymer solar cells /

Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs
по: Nguyễn, Đăng Chiến, et al.
Опубликовано: (2024)

ドキュメント　日本の半導体開発：超LSIへの道を拓いた男たちー「付」図解・でれにでもわかる半導体の話、半導体開発史年表
по: 中川靖造
Опубликовано: (1982)

RADIO ?... thật là đơn giản
по: E Aisberg
Опубликовано: (1984)

Mạch điều hợp tổng trở dùng transistor
по: Nguyễn Thị Loan Anh
Опубликовано: (1971)

Mạch khuếch đại trung tần và AGC dùng transistor
по: Lưu Hạnh Phúc
Опубликовано: (1972)

RF and microwave transistor oscillator design
по: Grebennikov, Andrei
Опубликовано: (2007)

Mô phỏng Transistor hiệu ứng trường dây Nano ZnO :
по: Nguyễn, Thành Tiên
Опубликовано: (2014)