Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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書誌詳細
その他の著者:	Aghoram, Umamaheswari., Chu, Min., Sun, Yongke., Thompson, Scott E.
フォーマット:	論文
言語:	English
主題:	Band structure Biaxial Effective mass Scattering Stress Uniaxial
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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