Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Dades bibliogràfiques
Altres autors:	Aghoram, Umamaheswari., Chu, Min., Sun, Yongke., Thompson, Scott E.
Format:	Article
Idioma:	English
Matèries:	Band structure Biaxial Effective mass Scattering Stress Uniaxial
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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