Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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التفاصيل البيبلوغرافية
مؤلفون آخرون:	Aghoram, Umamaheswari., Chu, Min., Sun, Yongke., Thompson, Scott E.
التنسيق:	مقال
اللغة:	English
الموضوعات:	Band structure Biaxial Effective mass Scattering Stress Uniaxial
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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