Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Λεπτομέρειες βιβλιογραφικής εγγραφής
Άλλοι συγγραφείς:	Aghoram, Umamaheswari., Chu, Min., Sun, Yongke., Thompson, Scott E.
Μορφή:	Άρθρο
Γλώσσα:	English
Θέματα:	Band structure Biaxial Effective mass Scattering Stress Uniaxial
Ετικέτες:	Προσθήκη ετικέτας Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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