Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Bibliografiska uppgifter
Övriga upphovsmän:	Aghoram, Umamaheswari., Chu, Min., Sun, Yongke., Thompson, Scott E.
Materialtyp:	Artikel
Språk:	English
Ämnen:	Band structure Biaxial Effective mass Scattering Stress Uniaxial
Taggar:	Lägg till en tagg Inga taggar, Lägg till första taggen!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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