Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

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其他作者:	Aghoram, Umamaheswari., Chu, Min., Sun, Yongke., Thompson, Scott E.
格式:	Bài viết
语言:	English
主题:	Band structure Biaxial Effective mass Scattering Stress Uniaxial
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Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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