Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions

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Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions

The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions f...

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Opis bibliograficzny
Główni autorzy:	Nguyễn, Đăng Chiến, Chun-Hsing Shih
Format:	Journal article
Język:	English
Wydane:	2023
Hasła przedmiotowe:	Short-channel effect silicon-germanium heterojunction technique sub-10-nm transistor tunnel field-effect transistor (TFET)
Dostęp online:	https://scholar.dlu.edu.vn/handle/123456789/2079
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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