Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the l...
שמור ב:
Những tác giả chính: | Nguyễn, Đăng Chiến, Hoang Sy Duc, Chun-Hsing Shih, Dinh Sy Hien |
---|---|
פורמט: | Conference paper |
שפה: | English |
יצא לאור: |
Bach Khoa Publishing House
2024
|
נושאים: | |
גישה מקוונת: | https://scholar.dlu.edu.vn/handle/123456789/3313 |
תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|
Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
---|
פריטים דומים
-
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
מאת: Nguyễn, Đăng Chiến, et al.
יצא לאור: (2024) -
Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
מאת: Nguyễn, Đăng Chiến, et al.
יצא לאור: (2024) -
A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
מאת: Bui Huu Thai, et al.
יצא לאור: (2024) -
A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
מאת: Bui, Huu Thai, et al.
יצא לאור: (2024) -
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
מאת: Chun-Hsing Shih, et al.
יצא לאור: (2023)