Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET)

Mã QR

Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET)

Công nghệ và linh kiện bán dẫn được ứng dụng rộng rãi trong tất cả các ngành công nghệ cao từ máy tính, ô-tô, thiết bị điện tử, viễn thông,… Các chuyên gia tài chính và công nghệ quốc tế cũng như trong nước đều nhận định sản xuất linh kiện bán dẫn được xem là phần cốt lõi trong cuộc cạnh tranh công...

Đã lưu trong:

书目详细资料
Những tác giả chính:	Nguyễn, Đăng Chiến, Lê, Văn Tùng, Phan, Văn Chuân, Nguyễn, Hữu H�, Bùi, Hữu Thái
格式:	Report
语言:	Vietnamese
出版:	2025
主题:	Tunnel field-effect transistror Band-to-band tunneling Double-gate Line tunneling Thin-body effect Quantum confinement effect
在线阅读:	https://scholar.dlu.edu.vn/handle/123456789/5583
标签:	添加标签没有标签, 成为第一个标记此记录!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

相似书籍

Thin-body effects in double-gate tunnel field-effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Re-evaluating the volume effect in double-gate tunnel field effect transistors
由: Bui Huu Thai, et al.
出版: (2024)

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
由: Chun-Hsing Shih, et al.
出版: (2024)

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
由: Chun-Hsing Shih, et al.
出版: (2023)

A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors
由: Bui Huu Thai, et al.
出版: (2024)

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2023)

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2023)

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
由: Bui Huu Thai, et al.
出版: (2024)

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
由: Bui, Huu Thai, et al.
出版: (2024)

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
由: Chun-Hsing Shih, et al.
出版: (2024)

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
由: Luu The Vinh, et al.
出版: (2023)

Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Short-channel effect and device design of extremely scaled tunnel field-effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2023)

Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
由: Nguyễn, Đăng Chiến, et al.
出版: (2023)

Fluctuations in biological and bioinspired electron-transfer reactions /
由: Skourtis, Spiros S.

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
由: Chun-Hsing Shih, et al.
出版: (2024)

Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities: From a Single Kondo Atom Towards a Coupled System
由: Prüser, Henning
出版: (2016)

Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
由: Nguyễn, Đăng Chiến, et al.
出版: (2023)

Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
由: Ji-Ting Liang, et al.
出版: (2024)

Design optimization of extremely short-channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications
由: Nguyễn, Đăng Chiến, et al.
出版: (2024)

Thiết kế hầm giao thông
由: Nguyễn, Thế Phùng
出版: (2008)

Tunneling Dynamics in Open Ultracold Bosonic Systems: Numerically Exact Dynamics – Analytical Models – Control Schemes
由: Lode, Axel U. J
出版: (2016)

Materials for magnetoresistive random access memory /
由: Slaughter, J. M.

Embryology, epigenesis, and evolution :
由: Robert, Jason Scott
出版: (2004)

Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

Coherent control of quantum dynamics with sequences of unitary phase-kick pulses /
由: Rego, Luis G. C.

Hoàng Mai Lưu và các ca khúc trong phong trào âm nhạc cách mạng
由: Huỳnh, Văn Tiểng
出版: (2002)

Dr. Pascarelli's complete guide to repetitive strain injury :
由: Pascarelli, Emil F.
出版: (2004)

Scanning tunneling microscopy with chemically modified gold tips : In situ reestablishment of chemical contrast /
由: Olson, Joel A.

Field-effect transistors :
出版: (1966)

Theory and applications of field-effect transistors
由: Cobbold, Richard S. C.
出版: (1970)

Direct observation of chiral oligo(p-phenylenevinylene)s with scanning tunneling microscopy /

Music from behind the bridge
由: Dudley, Shannon
出版: (2008)

ảnh hưởng của các loại phân đạm, phosphate, potasse trên năng suất của cây đậu xanh
由: Trịnh Minh Long
出版: (1971)