Tunnel field-effect transistor: a potential device for low-power electronic integrated circuits /

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Tunnel field-effect transistor: a potential device for low-power electronic integrated circuits /

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Bibliografiske detaljer
Hovedforfatter:	Nguyễn Đăng Chiến.
Andre forfattere:	Chun-Hsing Shih.
Format:	Bài viết
Sprog:	Vietnamese
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Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

Lignende værker

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Short-channel effect and device design of extremely scaled tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
af: Chun-Hsing Shih, et al.
Udgivet: (2024)

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
af: Luu The Vinh, et al.
Udgivet: (2023)

Design and Modeling of Tunnel Field-Effect Transistors
af: Nguyễn, Đăng Chiến
Udgivet: (2023)

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
af: Chun-Hsing Shih, et al.
Udgivet: (2024)

Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Design optimization of extremely short-channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors
af: Bui Huu Thai, et al.
Udgivet: (2024)

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
af: Bui Huu Thai, et al.
Udgivet: (2024)

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
af: Bui, Huu Thai, et al.
Udgivet: (2024)

Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions
af: Chun-Hsing Shih, et al.
Udgivet: (2024)

Thin-body effects in double-gate tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Negative capacitance in short-channel tunnel field-effect transistors
af: Hung-Jin Teng, et al.
Udgivet: (2024)

Short-drain effect of 5 nm tunnel field-effect transistors
af: Yu-Hsuan Chen, et al.
Udgivet: (2024)

Re-evaluating the volume effect in double-gate tunnel field effect transistors
af: Bui Huu Thai, et al.
Udgivet: (2024)

Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling
af: Chun-Hsing Shih, et al.
Udgivet: (2024)

Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
af: Chun-Hsing Shih, et al.
Udgivet: (2023)

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
af: Chun-Hsing Shih, et al.
Udgivet: (2024)

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Quantum Confinement Effect in Strained-Si¬1-xGex Double-Gate Tunnel Field-Effect Transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2024)

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
af: Nguyễn, Đăng Chiến, et al.
Udgivet: (2023)

Power electronics circuits, devices, and applications
af: Rashid, Muhammad H.
Udgivet: (2004)

Transistor circuits in electronics /
af: Hakim S. S.
Udgivet: (1964)

Field-effect transistors :
Udgivet: (1966)

On-Chip Current Sensors for Reliable, Secure, and Low-Power Integrated Circuits
af: Bastos, Rodrigo Possamai, et al.
Udgivet: (2020)

Organic Field Effect Transistors
af: Kymissis, Ioannis
Udgivet: (2020)

Electronic devices and circuits
af: Bogart, Theodore F
Udgivet: (2004)

Electronic Devices and Circuits /
af: Bogart, Theodore F.
Udgivet: (1991)

Electronic devices and circuits /
af: J.Cathey Jimmie
Udgivet: (2006)

Electronic circuits and devices
af: Smith, Ralph J
Udgivet: (1987)

Theory and applications of field-effect transistors
af: Cobbold, Richard S. C.
Udgivet: (1970)

Fundamentals of electron devices and circuits
af: Weed, Herman R.
Udgivet: (1960)