A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical T...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Bui, Huu Thai, Shih, Chun-Hsing, Nguyen, Dang Chien
التنسيق: مقال
اللغة:English
منشور في: Trường Đại học Đà Lạt 2024
الموضوعات:
Band-to-band tunneling
Channel-buried oxide
Doping pocket
Line tunneling
Low bandgap TFET
الوصول للمادة أونلاين:https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919
https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313
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