A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

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A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical T...

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Autori principali:	Bui, Huu Thai, Shih, Chun-Hsing, Nguyen, Dang Chien
Natura:	Articolo
Lingua:	English
Pubblicazione:	Trường Đại học Đà Lạt 2024
Soggetti:	Band-to-band tunneling Channel-buried oxide Doping pocket Line tunneling Low bandgap TFET
Accesso online:	https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313
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