Thin-body effects in double-gate tunnel field-effect transistors

Codice QR

Thin-body effects in double-gate tunnel field-effect transistors

Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...

Descrizione completa

Salvato in:

Dettagli Bibliografici
Autori principali:	Nguyễn, Đăng Chiến, Bui Huu Thai, Chun-Hsing Shih
Natura:	Journal article
Lingua:	English
Pubblicazione:	IOP Publishing 2024
Soggetti:	Thin-body effect double-gate band-to-band tunneling tunnel field-effect transistor
Accesso online:	https://scholar.dlu.edu.vn/handle/123456789/3287
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne! !

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

Documenti analoghi

Re-evaluating the volume effect in double-gate tunnel field effect transistors
di: Bui Huu Thai, et al.
Pubblicazione: (2024)

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2023)

Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
di: Chun-Hsing Shih, et al.
Pubblicazione: (2024)

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2023)

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
di: Chun-Hsing Shih, et al.
Pubblicazione: (2023)

A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors
di: Bui Huu Thai, et al.
Pubblicazione: (2024)

Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2023)

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
di: Bui Huu Thai, et al.
Pubblicazione: (2024)

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
di: Bui, Huu Thai, et al.
Pubblicazione: (2024)

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
di: Chun-Hsing Shih, et al.
Pubblicazione: (2024)

Short-channel effect and device design of extremely scaled tunnel field-effect transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2023)

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
di: Luu The Vinh, et al.
Pubblicazione: (2023)

Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
di: Chun-Hsing Shih, et al.
Pubblicazione: (2024)

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2023)

Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Design optimization of extremely short-channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
di: Ji-Ting Liang, et al.
Pubblicazione: (2024)

Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities: From a Single Kondo Atom Towards a Coupled System
di: Prüser, Henning
Pubblicazione: (2016)

Field-effect transistors :
Pubblicazione: (1966)

Fluctuations in biological and bioinspired electron-transfer reactions /
di: Skourtis, Spiros S.

Theory and applications of field-effect transistors
di: Cobbold, Richard S. C.
Pubblicazione: (1970)

Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
di: Lei, Ting
Pubblicazione: (2015)

Pentacene thin film transistors with various polymer gate insulators /

DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2023)

Strain : A solution for higher carrier mobility in nanoscale MOSFETs /

Quantum Confinement Effect in Strained-Si¬1-xGex Double-Gate Tunnel Field-Effect Transistors
di: Nguyễn, Đăng Chiến, et al.
Pubblicazione: (2024)

Hoàng Mai Lưu và các ca khúc trong phong trào âm nhạc cách mạng
di: Huỳnh, Văn Tiểng
Pubblicazione: (2002)

Tunneling Dynamics in Open Ultracold Bosonic Systems: Numerically Exact Dynamics – Analytical Models – Control Schemes
di: Lode, Axel U. J
Pubblicazione: (2016)

Music from behind the bridge
di: Dudley, Shannon
Pubblicazione: (2008)

Thiết kế hầm giao thông
di: Nguyễn, Thế Phùng
Pubblicazione: (2008)

Short-Channel Organic Thin-Film Transistors: Fabrication, Characterization, Modeling and Circuit Demonstration
di: Zaki, Tarek
Pubblicazione: (2015)

COULOMB DRAG RESISTIVITY IN DOUBLE-LAYER GRAPHENE: INHOMOGENEITY EFFECTS
di: Nguyen, Manh Tien, et al.
Pubblicazione: (2024)

Scanning tunneling microscopy with chemically modified gold tips : In situ reestablishment of chemical contrast /
di: Olson, Joel A.

CB :
Pubblicazione: (1976)