Thin-body effects in double-gate tunnel field-effect transistors

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Thin-body effects in double-gate tunnel field-effect transistors

Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...

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Opis bibliograficzny
Główni autorzy:	Nguyễn, Đăng Chiến, Bui Huu Thai, Chun-Hsing Shih
Format:	Journal article
Język:	English
Wydane:	IOP Publishing 2024
Hasła przedmiotowe:	Thin-body effect double-gate band-to-band tunneling tunnel field-effect transistor
Dostęp online:	https://scholar.dlu.edu.vn/handle/123456789/3287
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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