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Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the pe...

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Autors principals:	Nguyễn, Đăng Chiến, Chun-Hsing Shih
Format:	Journal article
Idioma:	English
Publicat:	2023
Matèries:	Source doping effects EOT scaling band-to-band tunneling tunnel field-effect transistor low-bandgap TFET
Accés en línia:	https://scholar.dlu.edu.vn/handle/123456789/2077
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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