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Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the pe...

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書誌詳細
主要な著者:	Nguyễn, Đăng Chiến, Chun-Hsing Shih
フォーマット:	Journal article
言語:	English
出版事項:	2023
主題:	Source doping effects EOT scaling band-to-band tunneling tunnel field-effect transistor low-bandgap TFET
オンライン･アクセス:	https://scholar.dlu.edu.vn/handle/123456789/2077
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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