Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...
שמור ב:
| Những tác giả chính: | , , , |
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
Springer Nature
2024
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| נושאים: | |
| גישה מקוונת: | https://scholar.dlu.edu.vn/handle/123456789/3290 |
| תגים: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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