Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

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Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...

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Autors principals:	Chun-Hsing Shih, Nguyễn, Đăng Chiến, Trần, Hữu Duy, Phan, Văn Chuân
Format:	Journal article
Idioma:	English
Publicat:	Springer Nature 2024
Matèries:	Hetero-gate dielectric High-k gate dielectric Band-to-band tunneling Tunnel field-effect transistor
Accés en línia:	https://scholar.dlu.edu.vn/handle/123456789/3290
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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