Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

kod QR

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...

Szczegółowa specyfikacja

Zapisane w:

Opis bibliograficzny
Główni autorzy:	Chun-Hsing Shih, Nguyễn, Đăng Chiến, Trần, Hữu Duy, Phan, Văn Chuân
Format:	Journal article
Język:	English
Wydane:	Springer Nature 2024
Hasła przedmiotowe:	Hetero-gate dielectric High-k gate dielectric Band-to-band tunneling Tunnel field-effect transistor
Dostęp online:	https://scholar.dlu.edu.vn/handle/123456789/3290
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

Podobne zapisy

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2023)

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Thin-body effects in double-gate tunnel field-effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Re-evaluating the volume effect in double-gate tunnel field effect transistors
od: Bui Huu Thai, i wsp.
Wydane: (2024)

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2023)

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
od: Chun-Hsing Shih, i wsp.
Wydane: (2023)

A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors
od: Bui Huu Thai, i wsp.
Wydane: (2024)

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
od: Bui Huu Thai, i wsp.
Wydane: (2024)

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
od: Bui, Huu Thai, i wsp.
Wydane: (2024)

Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2023)

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
od: Chun-Hsing Shih, i wsp.
Wydane: (2024)

Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Porous pSiCOH ultralow-k dielectrics for chip interconnects prepared by PECVD /
od: Grill, Alfred.

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
od: Ji-Ting Liang, i wsp.
Wydane: (2024)

On-current limitation of high-k gate insulator MOSFETs
od: Chun-Hsing Shih, i wsp.
Wydane: (2024)

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
od: Luu The Vinh, i wsp.
Wydane: (2023)

Short-channel effect and device design of extremely scaled tunnel field-effect transistors
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2023)

Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applications
od: Hung-Jin Teng, i wsp.
Wydane: (2021)

Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Dependence of ozone generation in a micro dielectric barrier discharge on dielectric material and micro gap length /
od: Sakoda, Tatsuya.

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
od: Chun-Hsing Shih, i wsp.
Wydane: (2024)

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2023)

Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2023)

Bill Gates con đường đến tương lai /
od: Gatlin Jonathan
Wydane: (2001)

Design optimization of extremely short-channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications
od: Nguyễn, Đăng Chiến, i wsp.
Wydane: (2024)

Application of dielectric spectroscopy measurements for estimating moisture content in power transformers /
od: Ekanayake, Chandima.

Con đường đi đến xa lộ thông tin của Bill Gates
Wydane: (1996)

Hoàng Mai Lưu và các ca khúc trong phong trào âm nhạc cách mạng
od: Huỳnh, Văn Tiểng
Wydane: (2002)

Bill Gates & Microsoft
Wydane: (1990)

Tunneling Dynamics in Open Ultracold Bosonic Systems: Numerically Exact Dynamics – Analytical Models – Control Schemes
od: Lode, Axel U. J
Wydane: (2016)

Dielectric barrier discharge for ultraviolet light generation and its efficient driving inverter circuit /
od: Oleg, Kudryavtsev.

Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities: From a Single Kondo Atom Towards a Coupled System
od: Prüser, Henning
Wydane: (2016)

Fluctuations in biological and bioinspired electron-transfer reactions /
od: Skourtis, Spiros S.

Music from behind the bridge
od: Dudley, Shannon
Wydane: (2008)

Bí quyết kinh doanh những doanh nhân hàng đầu thế giới Bill Gates và Microsoft
od: Marshall, David
Wydane: (1999)

Thiết kế hầm giao thông
od: Nguyễn, Thế Phùng
Wydane: (2008)