Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

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Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...

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Библиографические подробности
Главные авторы:	Chun-Hsing Shih, Nguyễn, Đăng Chiến, Trần, Hữu Duy, Phan, Văn Chuân
Формат:	Journal article
Язык:	English
Опубликовано:	Springer Nature 2024
Предметы:	Hetero-gate dielectric High-k gate dielectric Band-to-band tunneling Tunnel field-effect transistor
Online-ссылка:	https://scholar.dlu.edu.vn/handle/123456789/3290
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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