Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

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Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...

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書目詳細資料
Những tác giả chính:	Chun-Hsing Shih, Nguyễn, Đăng Chiến, Trần, Hữu Duy, Phan, Văn Chuân
格式:	Journal article
語言:	English
出版:	Springer Nature 2024
主題:	Hetero-gate dielectric High-k gate dielectric Band-to-band tunneling Tunnel field-effect transistor
在線閱讀:	https://scholar.dlu.edu.vn/handle/123456789/3290
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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